Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.021 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 83 W
Technical parameters/drain source voltage (Vds): -80.0 V
Technical parameters/Continuous drain current (Ids): -28.0 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PowerPAKSO-8
External dimensions/length: 5.99 mm
External dimensions/height: 1.07 mm
External dimensions/packaging: PowerPAKSO-8
Physical parameters/operating temperature: -55℃ ~ 150℃
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7469DP-T1-E3
|
Vishay Intertechnology | 类似代替 | SO-8 |
VISHAY SI7469DP-T1-E3 晶体管, MOSFET, P沟道, -28 A, -80 V, 0.021 ohm, -10 V, -3 V
|
||
SI7469DP-T1-E3
|
Vishay Siliconix | 类似代替 | SO-8 |
VISHAY SI7469DP-T1-E3 晶体管, MOSFET, P沟道, -28 A, -80 V, 0.021 ohm, -10 V, -3 V
|
||
SI7469DP-T1-E3
|
Vishay Semiconductor | 类似代替 | PowerPAKSO-8 |
VISHAY SI7469DP-T1-E3 晶体管, MOSFET, P沟道, -28 A, -80 V, 0.021 ohm, -10 V, -3 V
|
||
SI7469DP-T1-GE3
|
VISHAY | 类似代替 | SO-8 |
MOSFET P-CH 80V 28A PPAK SO-8
|
||
SI7469DP-T1-GE3
|
Vishay Semiconductor | 类似代替 | PowerPAKSO-8 |
MOSFET P-CH 80V 28A PPAK SO-8
|
||
SI7469DP-T1-GE3
|
Vishay Siliconix | 类似代替 | SO-8 |
MOSFET P-CH 80V 28A PPAK SO-8
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review