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Model SI7469DP-T1-GE3

Description 晶体管, MOSFET, 沟槽式FET, P沟道, -28 A, -80 V, 0.021 ohm, -10 V, -3 V

Brand: VISHAY

Packaging SO-8

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of pins:	8
Technical parameters/drain source resistance:	29 mΩ
Technical parameters/polarity:	P-Channel
Technical parameters/dissipated power:	5.2 W
Technical parameters/drain source voltage (Vds):	80 V
Technical parameters/Continuous drain current (Ids):	-28.0 A
Technical parameters/Input capacitance (Ciss):	4700pF @40V(Vds)
Technical parameters/rated power (Max):	83 W
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	5200 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	8
Encapsulation parameters/Encapsulation:	SO-8
Dimensions/Length:	6.15 mm
Dimensions/Width:	5.15 mm
Dimensions/Height:	1.04 mm
Dimensions/Packaging:	SO-8
Physical parameters/operating temperature:	-55℃ ~ 150℃
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Other/Minimum Packaging:	2500
Other/Manufacturing Applications:	Power Management, Industrial
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free

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