Technical parameters/drain source resistance: 29 mΩ
Technical parameters/dissipated power: 5.2W (Ta), 83.3W (Tc)
Technical parameters/drain source voltage (Vds): 80 V
Technical parameters/Input capacitance (Ciss): 4700pF @40V(Vds)
Technical parameters/dissipated power (Max): 5.2W (Ta), 83.3W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7469DP-T1-E3
|
Vishay Intertechnology | 类似代替 | SO-8 |
P 通道 MOSFET,TrenchFET® Gen IV,Vishay Semiconductor ### MOSFET 晶体管,Vishay Semiconductor
|
||
SI7469DP-T1-E3
|
Vishay Siliconix | 类似代替 | SO-8 |
P 通道 MOSFET,TrenchFET® Gen IV,Vishay Semiconductor ### MOSFET 晶体管,Vishay Semiconductor
|
||
SI7469DP-T1-E3
|
Vishay Semiconductor | 类似代替 | PowerPAKSO-8 |
P 通道 MOSFET,TrenchFET® Gen IV,Vishay Semiconductor ### MOSFET 晶体管,Vishay Semiconductor
|
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