Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 28W (Tc)
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Continuous drain current (Ids): 4.9A
Technical parameters/rise time: 7 ns
Technical parameters/Input capacitance (Ciss): 557pF @100V(Vds)
Technical parameters/descent time: 14 ns
Technical parameters/dissipated power (Max): 28W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.65 mm
External dimensions/width: 4.85 mm
External dimensions/height: 16.15 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: , telecom rectifier,, PWM stages (TTF, LLC) for, PFC stages for
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IPA60R600CP
|
Infineon | 类似代替 | TO-220-3 |
INFINEON IPA60R600CP 功率场效应管, MOSFET, N沟道, 6.1 A, 650 V, 0.54 ohm, 10 V, 3 V
|
||
IPA60R600CPXKSA1
|
Infineon | 类似代替 | TO-220-3 |
N沟道 600V 6.1A
|
||
IPA60R600P6XKSA1
|
Infineon | 功能相似 | TO-220 |
单 P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
|
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