Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.54 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 28 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Continuous drain current (Ids): 6.1A
Technical parameters/rise time: 12 ns
Technical parameters/Input capacitance (Ciss): 550pF @100V(Vds)
Technical parameters/rated power (Max): 28 W
Technical parameters/descent time: 17 ns
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.65 mm
External dimensions/width: 4.85 mm
External dimensions/height: 16.15 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Communication and networking, power management, alternative energy, portable devices, alternative energy, consumer electronics, industrial, Power Management, Consumer Electronics, Industrial, Communications & Networking
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IPA60R600CPXKSA1
|
Infineon | 类似代替 | TO-220-3 |
N沟道 600V 6.1A
|
||
IPA60R600P6
|
Infineon | 类似代替 | TO-220-3 |
600V,600mΩ,4.9A,N沟道功率MOSFET
|
||
IPA60R600P6XKSA1
|
Infineon | 功能相似 | TO-220 |
单 P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
|
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