Technical parameters/rated power: 28 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.54 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 28 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Continuous drain current (Ids): 4.9A
Technical parameters/rise time: 7 ns
Technical parameters/Input capacitance (Ciss): 557pF @100V(Vds)
Technical parameters/descent time: 14 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 28000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: PFC stages for, , telecom rectifier,, PWM stages (TTF, LLC) for
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IPA60R600CP
|
Infineon | 功能相似 | TO-220-3 |
INFINEON IPA60R600CP 功率场效应管, MOSFET, N沟道, 6.1 A, 650 V, 0.54 ohm, 10 V, 3 V
|
||
IPA60R600CPXKSA1
|
Infineon | 功能相似 | TO-220-3 |
N沟道 600V 6.1A
|
||
IPA60R600P6
|
Infineon | 功能相似 | TO-220-3 |
600V,600mΩ,4.9A,N沟道功率MOSFET
|
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