Technical parameters/rise time: 63 ns
Technical parameters/Input capacitance (Ciss): 270pF @25V(Vds)
Technical parameters/descent time: 31 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1300 mW
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: DIP-4
External dimensions/packaging: DIP-4
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFD9014PBF
|
International Rectifier | 完全替代 | DIP |
MOSFET P-CH 60V 1.1A 4-DIP
|
||
IRFD9014PBF
|
Vishay Intertechnology | 完全替代 | DIP |
MOSFET P-CH 60V 1.1A 4-DIP
|
||
IRFD9014PBF
|
Vishay Siliconix | 完全替代 | DIP-4 |
MOSFET P-CH 60V 1.1A 4-DIP
|
||
IRFD9014PBF
|
Vishay Semiconductor | 完全替代 | HVMDIP |
MOSFET P-CH 60V 1.1A 4-DIP
|
||
IRFD9014PBF
|
VISHAY | 完全替代 | DIP-4 |
MOSFET P-CH 60V 1.1A 4-DIP
|
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