Technical parameters/rated power: 1.3 W
Technical parameters/number of pins: 4
Technical parameters/drain source resistance: 0.5 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.3 W
Technical parameters/input capacitance: 270 pF
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): -1.10 A
Technical parameters/rise time: 63 ns
Technical parameters/Input capacitance (Ciss): 270pF @25V(Vds)
Technical parameters/rated power (Max): 1.3 W
Technical parameters/descent time: 31 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.3 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: DIP-4
External dimensions/length: 5 mm
External dimensions/width: 6.29 mm
External dimensions/height: 3.37 mm
External dimensions/packaging: DIP-4
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Minimum Packaging: 2500
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFD9014
|
Vishay Siliconix | 完全替代 | DIP-4 |
MOSFET P-CH 60V 1.1A 4-DIP
|
||
IRFD9014
|
International Rectifier | 完全替代 | DIP |
MOSFET P-CH 60V 1.1A 4-DIP
|
||
IRFD9014
|
VISHAY | 完全替代 | DIP-4 |
MOSFET P-CH 60V 1.1A 4-DIP
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review