Technical parameters/rated voltage (DC): -60.0 V
Technical parameters/rated current: -1.10 A
Technical parameters/drain source resistance: 500 mΩ (max)
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.3W (Ta)
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: -60.0 V
Technical parameters/Continuous drain current (Ids): -1.10 A
Technical parameters/rise time: 63.0 ns
Technical parameters/Input capacitance (Ciss): 270pF @25V(Vds)
Technical parameters/dissipated power (Max): 1.3W (Ta)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: DIP-4
External dimensions/packaging: DIP-4
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFD9014PBF
|
International Rectifier | 完全替代 | DIP |
MOSFET P-CH 60V 1.1A 4-DIP
|
||
IRFD9014PBF
|
Vishay Intertechnology | 完全替代 | DIP |
MOSFET P-CH 60V 1.1A 4-DIP
|
||
IRFD9014PBF
|
Vishay Siliconix | 完全替代 | DIP-4 |
MOSFET P-CH 60V 1.1A 4-DIP
|
||
IRFD9014PBF
|
Vishay Semiconductor | 完全替代 | HVMDIP |
MOSFET P-CH 60V 1.1A 4-DIP
|
||
IRFD9014PBF
|
VISHAY | 完全替代 | DIP-4 |
MOSFET P-CH 60V 1.1A 4-DIP
|
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