Technical parameters/rated voltage (DC): | -60.0 V |
|
Technical parameters/rated current: | -1.10 A |
|
Technical parameters/polarity: | P-Channel |
|
Technical parameters/dissipated power: | 1.30 W |
|
Technical parameters/drain source voltage (Vds): | -60.0 V |
|
Technical parameters/Leakage source breakdown voltage: | -60.0 V |
|
Technical parameters/Continuous drain current (Ids): | -1.10 A |
|
Technical parameters/rise time: | 63.0 ns |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 4 |
|
Encapsulation parameters/Encapsulation: | DIP |
|
Dimensions/Packaging: | DIP |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFD9014
|
Vishay Siliconix | 完全替代 | DIP-4 |
MOSFET P-CH 60V 1.1A 4-DIP
|
||
IRFD9014
|
International Rectifier | 完全替代 | DIP |
MOSFET P-CH 60V 1.1A 4-DIP
|
||
IRFD9014
|
VISHAY | 完全替代 | DIP-4 |
MOSFET P-CH 60V 1.1A 4-DIP
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review