Technical parameters/dissipated power: 1000 mW
Technical parameters/rise time: 8.6 ns
Technical parameters/Input capacitance (Ciss): 360pF @25V(Vds)
Technical parameters/descent time: 16 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 1W (Ta)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: DIP-4
External dimensions/packaging: DIP-4
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FS5KM-5
|
Mitsubishi | 功能相似 |
高速开关使用 HIGH-SPEED SWITCHING USE
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IRFD420
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Vishay Siliconix | 功能相似 | HVMDIP-4 |
MOSFET N-CH 500V 370mA 4-DIP
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IRFD420
|
VISHAY | 功能相似 | DIP |
MOSFET N-CH 500V 370mA 4-DIP
|
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IRFD420
|
Vishay Semiconductor | 功能相似 | HVMDIP-4 |
MOSFET N-CH 500V 370mA 4-DIP
|
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