Technical parameters/number of channels: | 1 |
|
Technical parameters/dissipated power: | 1W (Ta) |
|
Technical parameters/drain source voltage (Vds): | 500 V |
|
Technical parameters/Input capacitance (Ciss): | 360pF @25V(Vds) |
|
Technical parameters/dissipated power (Max): | 1W (Ta) |
|
Encapsulation parameters/installation method: | Through Hole |
|
Encapsulation parameters/Encapsulation: | HVMDIP-4 |
|
Dimensions/Width: | 6.29 mm |
|
Dimensions/Packaging: | HVMDIP-4 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Obsolete |
|
Other/Packaging Methods: | Tube |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFD420PBF
|
VISHAY | 功能相似 | DIP-4 |
MOSFET N-CH 500V 370mA 4-DIP
|
||
IRFD420PBF
|
Vishay Intertechnology | 功能相似 | DIP |
MOSFET N-CH 500V 370mA 4-DIP
|
||
IRFD420PBF
|
LiteOn | 功能相似 | HVMDIP-4 |
MOSFET N-CH 500V 370mA 4-DIP
|
||
IRFD420PBF
|
Vishay Siliconix | 功能相似 | DIP-4 |
MOSFET N-CH 500V 370mA 4-DIP
|
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