Technical parameters/rise time: 8.6 ns
Technical parameters/Input capacitance (Ciss): 360pF @25V(Vds)
Technical parameters/descent time: 16 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1000 mW
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: DIP
External dimensions/packaging: DIP
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFD420PBF
|
VISHAY | 功能相似 | DIP-4 |
MOSFET N-CH 500V 370mA 4-DIP
|
||
IRFD420PBF
|
Vishay Intertechnology | 功能相似 | DIP |
MOSFET N-CH 500V 370mA 4-DIP
|
||
IRFD420PBF
|
LiteOn | 功能相似 | HVMDIP-4 |
MOSFET N-CH 500V 370mA 4-DIP
|
||
IRFD420PBF
|
Vishay Siliconix | 功能相似 | DIP-4 |
MOSFET N-CH 500V 370mA 4-DIP
|
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