Technical parameters/drain source resistance: 0.2 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 32 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: ±60.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 8.40 A
Technical parameters/Input capacitance (Ciss): 480pF @25V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/dissipated power (Max): 2.5W (Ta), 32W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR120TRLPBF
|
VISHAY | 功能相似 | TO-252-3 |
MOSFET N-CH 100V 7.7A DPAK
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IRFR120TRLPBF
|
Vishay Semiconductor | 功能相似 | TO-252-3 |
MOSFET N-CH 100V 7.7A DPAK
|
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IRFR120TRLPBF
|
Vishay Intertechnology | 功能相似 | DPAK |
MOSFET N-CH 100V 7.7A DPAK
|
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IRFR120TRPBF
|
VISHAY | 功能相似 | TO-252-3 |
Trans MOSFET N-CH 100V 7.7A 3Pin(2+Tab) DPAK T/R
|
||
IRFR120TRPBF
|
Vishay Siliconix | 功能相似 | TO-252-3 |
Trans MOSFET N-CH 100V 7.7A 3Pin(2+Tab) DPAK T/R
|
||
IRFR120TRPBF
|
International Rectifier | 功能相似 | TO-252-3 |
Trans MOSFET N-CH 100V 7.7A 3Pin(2+Tab) DPAK T/R
|
||
IRFR120ZPBF
|
International Rectifier | 功能相似 | TO-252-3 |
INFINEON IRFR120ZPBF 晶体管, MOSFET, N沟道, 8.7 A, 100 V, 190 mohm, 10 V, 4 V
|
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