Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 8.70 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 35 W
Technical parameters/product series: IRFR120Z
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: 100 V
Technical parameters/Continuous drain current (Ids): 8.70 A
Technical parameters/rise time: 26.0 ns
Technical parameters/Input capacitance (Ciss): 310pF @25V(Vds)
Technical parameters/rated power (Max): 35 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR120PBF
|
International Rectifier | 功能相似 | TO-252 |
N 通道 MOSFET,100V 至 150V,Vishay Semiconductor ### MOSFET 晶体管,Vishay Semiconductor
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||
IRFR120TRPBF
|
VISHAY | 功能相似 | TO-252-3 |
TO-252-3 N-CH 100V 7.7A 270mΩ
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IRFR120TRPBF
|
Vishay Siliconix | 功能相似 | TO-252-3 |
TO-252-3 N-CH 100V 7.7A 270mΩ
|
||
IRFR120TRPBF
|
International Rectifier | 功能相似 | TO-252-3 |
TO-252-3 N-CH 100V 7.7A 270mΩ
|
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