Technical parameters/dissipated power: | 2.5W (Ta), 42W (Tc) |
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Technical parameters/drain source voltage (Vds): | 100 V |
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Technical parameters/Input capacitance (Ciss): | 360pF @25V(Vds) |
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Technical parameters/dissipated power (Max): | 2.5W (Ta), 42W (Tc) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-252-3 |
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Dimensions/Packaging: | TO-252-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR120NTRPBF
|
IFA | 功能相似 |
100V,9.4A,单N沟道HEXFET功率MOSFET
|
|||
IRFR120NTRPBF
|
Infineon | 功能相似 | TO-252-3 |
100V,9.4A,单N沟道HEXFET功率MOSFET
|
||
IRFR120NTRPBF
|
International Rectifier | 功能相似 | TO-252-3 |
100V,9.4A,单N沟道HEXFET功率MOSFET
|
||
IRFR120PBF
|
International Rectifier | 完全替代 | TO-252 |
MOSFET N-CH 100V 7.7A DPAK
|
||
IRFR120TRR
|
Vishay Siliconix | 完全替代 | TO-252-3 |
MOSFET N-CH 100V 7.7A DPAK
|
||
IRFR120ZPBF
|
International Rectifier | 功能相似 | TO-252-3 |
N沟道,Vdss=100V,Idss=8.7A
|
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