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Model NTD6600N-1G
Description DPAK Power MOSFET 100 V, 12 A, N − Channel, Logic Level DPAK
Product QR code
Brand: ON Semiconductor
Packaging TO-251-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
2.99  yuan 2.99yuan
5+:
$ 4.0311
25+:
$ 3.7325
50+:
$ 3.5235
100+:
$ 3.4339
500+:
$ 3.3742
2500+:
$ 3.2995
5000+:
$ 3.2697
10000+:
$ 3.2249
Quantity
5+
25+
50+
100+
500+
Price
$4.0311
$3.7325
$3.5235
$3.4339
$3.3742
Price $ 4.0311 $ 3.7325 $ 3.5235 $ 3.4339 $ 3.3742
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1378) Minimum order quantity(5)
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Technical parameters/polarity: N-CH

Technical parameters/dissipated power: 1.28W (Ta), 56.6W (Tc)

Technical parameters/drain source voltage (Vds): 100 V

Technical parameters/Continuous drain current (Ids): 12A

Technical parameters/Input capacitance (Ciss): 700pF @25V(Vds)

Technical parameters/rated power (Max): 1.28 W

Technical parameters/dissipated power (Max): 1.28W (Ta), 56.6W (Tc)

Encapsulation parameters/installation method: Through Hole

Encapsulation parameters/Encapsulation: TO-251-3

External dimensions/packaging: TO-251-3

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
MTD10N10EL MTD10N10EL ON Semiconductor 功能相似 DPAK-252
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TMOS E- FET功率场效应晶体管DPAK封装的表面贴装 TMOS E−FET Power Field Effect Transistor DPAK for Surface Mount
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