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Model MTD10N10ELT4
Description TMOS E- FETSurface mount TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount
Product QR code
Brand: ON Semiconductor
Packaging TO-252-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.95  yuan 0.95yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7284) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

100 V

 

Technical parameters/rated current:

10.0 A

 

Technical parameters/dissipated power:

1.75W (Ta), 40W (Tc)

 

Technical parameters/drain source voltage (Vds):

100 V

 

Technical parameters/Continuous drain current (Ids):

10.0 A

 

Technical parameters/rise time:

74.0 ns

 

Technical parameters/Input capacitance (Ciss):

1040pF @25V(Vds)

 

Technical parameters/rated power (Max):

1.75 W

 

Technical parameters/dissipated power (Max):

1.75W (Ta), 40W (Tc)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-252-3

 

Dimensions/Packaging:

TO-252-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

Non-Compliant

 

Compliant with standards/lead standards:

Contains Lead

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
NTD6600NT4 NTD6600NT4 ON Semiconductor 类似代替 TO-252-3
功率MOSFET的100 V， 12 A， N沟道逻辑电平的DPAK Power MOSFET 100 V, 12 A, N−Channel, Logic Level DPAK
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