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Model NTD6600NT4
Description 功率MOSFET的100 V， 12 A， N沟道逻辑电平的DPAK Power MOSFET 100 V, 12 A, N−Channel, Logic Level DPAK
Product QR code
Brand: ON Semiconductor
Packaging TO-252-3
Delivery time
Packaging method Tape
Standard packaging quantity 1
1.91  yuan 1.91yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6071) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

100 V

 

Technical parameters/rated current:

12.0 A

 

Technical parameters/drain source resistance:

118 mΩ

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

1.28W (Ta), 56.6W (Tc)

 

Technical parameters/Input capacitance:

700 pF

 

Technical parameters/gate charge:

20.0 nC

 

Technical parameters/drain source voltage (Vds):

100 V

 

Technical parameters/Leakage source breakdown voltage:

100 V

 

Technical parameters/breakdown voltage of gate source:

±20.0 V

 

Technical parameters/Continuous drain current (Ids):

12.0 A

 

Technical parameters/Input capacitance (Ciss):

700pF @25V(Vds)

 

Technical parameters/dissipated power (Max):

1.28W (Ta), 56.6W (Tc)

 

Encapsulation parameters/installation method:

Surface Mount

 

Encapsulation parameters/Encapsulation:

TO-252-3

 

Dimensions/Packaging:

TO-252-3

 

Physical parameters/operating temperature:

-55℃ ~ 175℃ (TJ)

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tape

 

Compliant with standards/RoHS standards:

Non-Compliant

 

Compliant with standards/lead standards:

Contains Lead

 

Customs information/ECCN code:

EAR99

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
MTD10N10ELT4 MTD10N10ELT4 ON Semiconductor 类似代替 TO-252-3
TMOS E- FET功率场效应晶体管DPAK封装的表面贴装 TMOS E−FET Power Field Effect Transistor DPAK for Surface Mount
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