Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 10A
Technical parameters/rise time: 74 ns
Technical parameters/Input capacitance (Ciss): 741pF @25V(Vds)
Technical parameters/descent time: 38 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1750 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: DPAK-252
External dimensions/packaging: DPAK-252
Physical parameters/materials: Silicon
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Rail
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MTD10N10ELT4
|
ON Semiconductor | 功能相似 | TO-252-3 |
TMOS E- FET功率场效应晶体管DPAK封装的表面贴装 TMOS E−FET Power Field Effect Transistor DPAK for Surface Mount
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||
NTD6600N-1G
|
ON Semiconductor | 功能相似 | TO-251-3 |
功率MOSFET的100 V, 12 A, N沟道逻辑电平的DPAK Power MOSFET 100 V, 12 A, N−Channel, Logic Level DPAK
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