Technical parameters/drain source resistance: 0.041 Ω
Technical parameters/dissipated power: 1.1 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/thermal resistance: 85℃/W (RθJA)
Technical parameters/rated power (Max): 1.1 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4925BDY
|
Vishay Siliconix | 类似代替 | SOIC-8 |
MOSFET 30V 7.1A 2W
|
||
SI4925BDY-T1-GE3
|
Vishay Siliconix | 完全替代 | SOIC-8 |
MOSFET P-CH DUAL 30V 8-SOIC
|
||
SI4925BDY-T1-GE3
|
VISHAY | 完全替代 | SOIC-8 |
MOSFET P-CH DUAL 30V 8-SOIC
|
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