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Model SI4925BDY
Description MOSFET 30V 7.1A 2W
Product QR code
Brand: Vishay Siliconix
Packaging SOIC-8
Delivery time
Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9589) Minimum order quantity(1)
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Technical parameters/drain source resistance:

41.0 mΩ

 

Technical parameters/polarity:

P-Channel

 

Technical parameters/dissipated power:

1.10 W

 

Technical parameters/breakdown voltage of gate source:

±20.0 V

 

Technical parameters/Continuous drain current (Ids):

5.30 A

 

Technical parameters/rise time:

12.0 ns

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

SOIC-8

 

Dimensions/Length:

4.9 mm

 

Dimensions/Width:

3.9 mm

 

Dimensions/Height:

1.75 mm

 

Dimensions/Packaging:

SOIC-8

 

Physical parameters/operating temperature:

-55℃ ~ 150℃

 

Other/Product Lifecycle:

Unknown

 

Compliant with standards/RoHS standards:

Non-Compliant

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4925BDY-T1-E3 SI4925BDY-T1-E3 Vishay Intertechnology 类似代替 SO-8
Trans MOSFET P-CH 30V 5.3A 8Pin SOIC N T/R
PDF
SI4925BDY-T1-E3 SI4925BDY-T1-E3 Vishay Siliconix 类似代替 SOIC-8
Trans MOSFET P-CH 30V 5.3A 8Pin SOIC N T/R
PDF
SI4925BDY-T1-GE3 SI4925BDY-T1-GE3 Vishay Siliconix 功能相似 SOIC-8
MOSFET P-CH DUAL 30V 8-SOIC
PDF
SI4925BDY-T1-GE3 SI4925BDY-T1-GE3 VISHAY 功能相似 SOIC-8
MOSFET P-CH DUAL 30V 8-SOIC
PDF

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