Technical parameters/number of channels: 2
Technical parameters/polarity: Dual P-Channel
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): -5.30 A
Technical parameters/rated power (Max): 1.1 W
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4925BDY
|
Vishay Siliconix | 功能相似 | SOIC-8 |
MOSFET 30V 7.1A 2W
|
||
|
|
Vishay Intertechnology | 完全替代 | SO-8 |
Trans MOSFET P-CH 30V 5.3A 8Pin SOIC N T/R
|
||
SI4925BDY-T1-E3
|
Vishay Siliconix | 完全替代 | SOIC-8 |
Trans MOSFET P-CH 30V 5.3A 8Pin SOIC N T/R
|
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