Technical parameters/drain source resistance: 0.192 Ω
Technical parameters/dissipated power: 1.66 W
Technical parameters/threshold voltage: 3 V
Technical parameters/input capacitance: 190pF @30V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Input capacitance (Ciss): 190pF @30V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.09W (Ta), 1.66W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 3.04 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2014/06/16
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLML0060TRPBF
|
Infineon | 功能相似 | SOT-23-3 |
INFINEON IRLML0060TRPBF 晶体管, MOSFET, N沟道, 2.7 A, 60 V, 0.078 ohm, 10 V, 2.5 V
|
||
IRLML0060TRPBF
|
IFA | 功能相似 |
INFINEON IRLML0060TRPBF 晶体管, MOSFET, N沟道, 2.7 A, 60 V, 0.078 ohm, 10 V, 2.5 V
|
|||
IRLML0060TRPBF
|
International Rectifier | 功能相似 | SOT-23-3 |
INFINEON IRLML0060TRPBF 晶体管, MOSFET, N沟道, 2.7 A, 60 V, 0.078 ohm, 10 V, 2.5 V
|
||
RSR020N06TL
|
ROHM Semiconductor | 功能相似 | SOT-23-3 |
二极管与整流器
|
||
SI2308BDS-T1-E3
|
Vishay Semiconductor | 完全替代 | SOT-23 |
TRANSISTOR 1900mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, ROHS COMPLIANT, SSOT-23, 3Pin, FET General Purpose Small Signal
|
||
|
|
Vishay Intertechnology | 类似代替 | SOT-23-3 |
MOSFET N-CH 60V 2A SOT23-3
|
||
SI2308DS-T1-E3
|
Vishay Semiconductor | 类似代替 | SOT-23 |
MOSFET N-CH 60V 2A SOT23-3
|
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