Technical parameters/dissipated power: | 1 W |
|
Technical parameters/drain source voltage (Vds): | 60 V |
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Technical parameters/rise time: | 10 ns |
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Technical parameters/Input capacitance (Ciss): | 180pF @10V(Vds) |
|
Technical parameters/rated power (Max): | 1 W |
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Technical parameters/descent time: | 6 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 540mW (Ta) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
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Dimensions/Packaging: | SOT-23-3 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Not For New Designs |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI2308BDS-T1-E3
|
Vishay Semiconductor | 功能相似 | SOT-23 |
TRANSISTOR 1900mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, ROHS COMPLIANT, SSOT-23, 3Pin, FET General Purpose Small Signal
|
||
SI2308BDS-T1-GE3
|
VISHAY | 功能相似 | SOT-23-3 |
MOSFET, N-Ch, Vds 60V, Vgs +/- 20V, Rds(on) 192mohm, Id 2.3A, SOT-23, Pd 1.66W
|
||
SI2308BDS-T1-GE3
|
Vishay Siliconix | 功能相似 | SOT-23-3 |
MOSFET, N-Ch, Vds 60V, Vgs +/- 20V, Rds(on) 192mohm, Id 2.3A, SOT-23, Pd 1.66W
|
||
SI2308BDS-T1-GE3
|
Vishay Intertechnology | 功能相似 | SOT-23-3 |
MOSFET, N-Ch, Vds 60V, Vgs +/- 20V, Rds(on) 192mohm, Id 2.3A, SOT-23, Pd 1.66W
|
||
|
|
Vishay Intertechnology | 功能相似 | SOT-23-3 |
MOSFET N-CH 60V 2A SOT23-3
|
||
SI2308DS-T1-E3
|
Vishay Semiconductor | 功能相似 | SOT-23 |
MOSFET N-CH 60V 2A SOT23-3
|
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