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Model SI2308BDS-T1-E3

Description VISHAY SI2308BDS-T1-E3 晶体管, MOSFET, N沟道, 2.3 A, 60 V, 0.13 ohm, 10 V, 1 V

Brand: Vishay Semiconductor

Packaging SOT-23

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	0.13 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	1.66 W
Technical parameters/threshold voltage:	1 V
Technical parameters/Input capacitance:	190pF @30V
Technical parameters/drain source voltage (Vds):	60 V
Technical parameters/Leakage source breakdown voltage:	60 V
Technical parameters/rise time:	16 ns
Technical parameters/thermal resistance:	115℃/W (RθJA)
Technical parameters/descent time:	17 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	SOT-23
Dimensions/Length:	3.04 mm
Dimensions/Height:	1.02 mm
Dimensions/Packaging:	SOT-23
Physical parameters/operating temperature:	-55℃ ~ 150℃
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	Power Management
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/06/15

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SI2308BDS-T1-GE3	Vishay Intertechnology	功能相似	SOT-23-3	VISHAY SI2308BDS-T1-GE3 晶体管, MOSFET, N沟道, 2.3 A, 60 V, 0.13 ohm, 10 V, 3 V	PDF