Technical parameters/polarity: P-Channel
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/Continuous drain current (Ids): -8.70 A
Technical parameters/rise time: 18 ns
Technical parameters/rated power (Max): 1.5 W
Technical parameters/descent time: 55 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOP
External dimensions/packaging: SOP
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4401DDY-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOIC-8 |
MOSFET P-CH 40V 16.1A 8-SOIC
|
||
SI4401DDY-T1-GE3
|
VISHAY | 功能相似 | SOIC-8 |
MOSFET P-CH 40V 16.1A 8-SOIC
|
||
SQ4401DY-T1-GE3
|
VISHAY | 功能相似 | SOIC-8 |
MOSFET 40V 8.7A 1.8W 14mohm @ 10V
|
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