Chip AI consultant
Technical parameters/forward voltage: 1.10 V
Technical parameters/dissipated power: 1.50 W
Technical parameters/rise time: 13.0 ns
Package parameters/number of pins: 8
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4420DY-E3
|
Vishay Siliconix | 功能相似 | SO |
Power Field-Effect Transistor, 9.5A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
|
||
SI4420DYPBF
|
Infineon | 功能相似 | SOIC-8 |
MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
|
||
SI4420DYTRPBF
|
Infineon | 功能相似 | SOIC-8 |
晶体管, MOSFET, N沟道, 12.5 A, 30 V, 0.009 ohm, 10 V, 1 V
|
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