logo
BOM RFQ Login Register
English
Home Page   Discrete Device   transistor   MOSpipe   SI4420DYPBF
Warm reminder: The pictures are for reference only. The actual product may vary
Collection
Model SI4420DYPBF
Description MOSFET Transistors, Infineon (IR) Infineon's comprehensive and robust combination of single and dual N-channel and P-channel devices provides fast switching speed and can meet various power requirements. The application scope ranges from AC-DC and DC-DC power supplies to audio and consumer electronics products, from motor control to lighting and household appliances.
Product QR code
Brand: Infineon
Packaging SOIC-8
Delivery time
Packaging method Tube
Standard packaging quantity 1
1.96  yuan 1.96yuan
5+:
$ 2.6487
25+:
$ 2.4525
50+:
$ 2.3152
100+:
$ 2.2563
500+:
$ 2.2171
2500+:
$ 2.1680
5000+:
$ 2.1484
10000+:
$ 2.1190
Quantity
5+
25+
50+
100+
500+
Price
$2.6487
$2.4525
$2.3152
$2.2563
$2.2171
Price $ 2.6487 $ 2.4525 $ 2.3152 $ 2.2563 $ 2.2171
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2719) Minimum order quantity(5)
Add to Cart Buy now
Welcome to use ICGOODFIND AI Assistant
Chip AI consultant  Chip AI consultant
Download related files
PDF
  • Disappointment
  • General
  • Satisfied
  • Like
  • Love it so much

Technical parameters/number of channels: 1

Technical parameters/drain source resistance: 0.009 Ω

Technical parameters/dissipated power: 2.5 W

Technical parameters/threshold voltage: 1 V

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/rise time: 10 ns

Technical parameters/Input capacitance (Ciss): 2240pF @15V(Vds)

Technical parameters/descent time: 47 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 2.5W (Ta)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC-8

External dimensions/length: 4.9 mm

External dimensions/width: 3.9 mm

External dimensions/height: 1.75 mm

External dimensions/packaging: SOIC-8

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Not Recommended for New Designs

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: lead-free

Compliant with standard/REACH SVHC version: 2015/12/17

The most helpful review

  Only display evaluations with images

Latest Review

Load more

There is no evaluation yet

Looking forward to your sharing the joy brought by technology

Ask a question
Most helpful | Latest
Sorry, I couldn't find the answer. You can click "Ask a Question" to submit this question to the official customer service and product manager of Suteshop Mall who have already purchased it. We will reply in a timely manner.

No questions have been asked yet

I'm not very familiar with the product yet. Just ask around

Load more
    No data available for the time being.

Product inquiry

Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4420DY SI4420DY Visay 功能相似
单N沟道逻辑电平MOSFET PowerTrencha Single N-Channel Logic Level PowerTrencha MOSFET
SI4420DY SI4420DY International Rectifier 功能相似 SOIC-8
单N沟道逻辑电平MOSFET PowerTrencha Single N-Channel Logic Level PowerTrencha MOSFET
PDF
SI4420DY SI4420DY Fairchild 功能相似 SO-8
单N沟道逻辑电平MOSFET PowerTrencha Single N-Channel Logic Level PowerTrencha MOSFET
PDF
SI4420DY SI4420DY Vishay Siliconix 功能相似 SOT
单N沟道逻辑电平MOSFET PowerTrencha Single N-Channel Logic Level PowerTrencha MOSFET
PDF
SI4420DY SI4420DY Vishay Semiconductor 功能相似
单N沟道逻辑电平MOSFET PowerTrencha Single N-Channel Logic Level PowerTrencha MOSFET
SI4420DY SI4420DY Infineon 功能相似 SO-8
单N沟道逻辑电平MOSFET PowerTrencha Single N-Channel Logic Level PowerTrencha MOSFET
PDF
SI4420DY SI4420DY ON Semiconductor 功能相似 SOIC-8
单N沟道逻辑电平MOSFET PowerTrencha Single N-Channel Logic Level PowerTrencha MOSFET
PDF
SI4420DYTRPBF SI4420DYTRPBF Infineon 完全替代 SOIC-8
晶体管, MOSFET, N沟道, 12.5 A, 30 V, 0.009 ohm, 10 V, 1 V
PDF

Newly listed products

Product service

PLATFORM

CONTACT US

  • ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
  • Address: Room 611, Block A, Aerospace Building, No. 4019, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China
  • Tel: +86-0755-82866643

CONTACT INFORMATION

  • WhatsApp：+8615820418003
  • Facebook Messenger：Emily He
  • WeChat：15820418003
  • Telegram：+8613641420552
  • Microsoft Teams：newkasion1
  • E-mail：sales@icgoodfind.com
  • Technical Cooperation：Ericguo@icgoodfind.com
Product Index：
Brand Index：
Friendship link : Chinese Electronic Component Distributor | STM | broadcom | Altera | ISSI | onsemi | nexperia | NXP | Microchip | diodes | lattice | Electronic Component Distributor | Analog Devices | XILINX | Texas Instruments | Infineon | TiToK | YouTube | X | Linkedln | Facebook | VK |

©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.

Scroll

Comparison

Unfold

pk

Clear