Technical parameters/drain source resistance: 7.50 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.50 W
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 13.5 A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SO
External dimensions/packaging: SO
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Visay | 功能相似 |
单N沟道逻辑电平MOSFET PowerTrencha Single N-Channel Logic Level PowerTrencha MOSFET
|
|||
SI4420DY
|
International Rectifier | 功能相似 | SOIC-8 |
单N沟道逻辑电平MOSFET PowerTrencha Single N-Channel Logic Level PowerTrencha MOSFET
|
||
SI4420DY
|
Fairchild | 功能相似 | SO-8 |
单N沟道逻辑电平MOSFET PowerTrencha Single N-Channel Logic Level PowerTrencha MOSFET
|
||
SI4420DY
|
Vishay Siliconix | 功能相似 | SOT |
单N沟道逻辑电平MOSFET PowerTrencha Single N-Channel Logic Level PowerTrencha MOSFET
|
||
SI4420DY
|
Vishay Semiconductor | 功能相似 |
单N沟道逻辑电平MOSFET PowerTrencha Single N-Channel Logic Level PowerTrencha MOSFET
|
|||
SI4420DY
|
Infineon | 功能相似 | SO-8 |
单N沟道逻辑电平MOSFET PowerTrencha Single N-Channel Logic Level PowerTrencha MOSFET
|
||
SI4420DY
|
ON Semiconductor | 功能相似 | SOIC-8 |
单N沟道逻辑电平MOSFET PowerTrencha Single N-Channel Logic Level PowerTrencha MOSFET
|
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