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Description Trans MOSFET N-CH 30V 9.5A 8Pin SOIC N T/R
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Packaging SO
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Standard packaging quantity 1
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    Inventory(6691) Minimum order quantity(1)
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Technical parameters/drain source resistance: 13.0 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 1.50 W

Technical parameters/leakage source breakdown voltage: 30.0 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): 9.50 A

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SO

External dimensions/packaging: SO

Compliant with standards/RoHS standards: Non-Compliant

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