Technical parameters/drain source resistance: 13.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.50 W
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 9.50 A
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO
External dimensions/packaging: SO
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Visay | 功能相似 |
MOSFET 30V 12.5A 2.5W
|
|||
SI4420DY
|
International Rectifier | 功能相似 | SOIC-8 |
MOSFET 30V 12.5A 2.5W
|
||
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|
Fairchild | 功能相似 | SO-8 |
MOSFET 30V 12.5A 2.5W
|
||
SI4420DY
|
Vishay Siliconix | 功能相似 | SOT |
MOSFET 30V 12.5A 2.5W
|
||
SI4420DY
|
Vishay Semiconductor | 功能相似 |
MOSFET 30V 12.5A 2.5W
|
|||
SI4420DY
|
Infineon | 功能相似 | SO-8 |
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|
||
SI4420DY
|
ON Semiconductor | 功能相似 | SOIC-8 |
MOSFET 30V 12.5A 2.5W
|
||
SI4420DY,518
|
NXP | 功能相似 | SO-8 |
SO N-CH 30V 12.5A
|
||
|
|
Nexperia | 功能相似 |
SO N-CH 30V 12.5A
|
|||
SI4420DYPBF
|
Infineon | 功能相似 | SOIC-8 |
MOSFET 晶体管,Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度,且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品,从电动机控制到照明和家用电器。
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