Technical parameters/rated voltage (DC): 40.0 V
Technical parameters/drain source resistance: 0.012 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.56 W
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/leakage source breakdown voltage: 40 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 14.0 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/length: 5 mm
External dimensions/height: 1.55 mm
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4840BDY-T1-GE3
|
Vishay Semiconductor | 功能相似 | NSOIC-8 |
MOSFET, Power; N-Ch; VDSS 40V; RDS(ON) 0.0075Ω; ID 10A; SO-8; PD 1.56W; VGS +/
|
||
SI4840BDY-T1-GE3
|
Vishay Siliconix | 功能相似 | SO-8 |
MOSFET, Power; N-Ch; VDSS 40V; RDS(ON) 0.0075Ω; ID 10A; SO-8; PD 1.56W; VGS +/
|
||
SI4840DY-E3
|
Vishay Semiconductor | 类似代替 | SO |
Small Signal Field-Effect Transistor, 10A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8
|
||
SI4840DY-E3
|
Vishay Siliconix | 类似代替 | SO-8 |
Small Signal Field-Effect Transistor, 10A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8
|
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