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Model SI4840DY-E3
Description Small Signal Field-Effect Transistor, 10A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8
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Brand: Vishay Siliconix
Packaging SO-8
Delivery time
Packaging method Tube
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5132) Minimum order quantity(1)
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Technical parameters/drain source resistance: 9.00 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 1.56 W

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): 14.0 A

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: SO-8

External dimensions/packaging: SO-8

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4840DY-T1 SI4840DY-T1 Vishay Siliconix 功能相似 SOT
Small Signal Field-Effect Transistor, 10A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
SI4840DY-T1 SI4840DY-T1 VISHAY 功能相似 SO
Small Signal Field-Effect Transistor, 10A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
PDF
SI4840DY-T1-E3 SI4840DY-T1-E3 Vishay Semiconductor 类似代替 SO-8
MOSFET, Power; N-Ch; VDSS 40V; RDS(ON) 0.0075Ω; ID 10A; SO-8; PD 1.56W; VGS +/-20V
PDF
SI4840DY-T1-E3 SI4840DY-T1-E3 Vishay Siliconix 类似代替 SO-8
MOSFET, Power; N-Ch; VDSS 40V; RDS(ON) 0.0075Ω; ID 10A; SO-8; PD 1.56W; VGS +/-20V
PDF
SI4840DY-T1-GE3 SI4840DY-T1-GE3 Vishay Siliconix 类似代替 SO-8
MOSFET N-CH 40V 10A 8-SOIC
PDF
SI4840DY-T1-GE3 SI4840DY-T1-GE3 VISHAY 类似代替
MOSFET N-CH 40V 10A 8-SOIC
PDF

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