Technical parameters/rated voltage (DC): 40.0 V
Technical parameters/forward voltage: 750 mV
Technical parameters/drain source resistance: 9.00 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.56 W
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/leakage source breakdown voltage: 40.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 14.0 A
Technical parameters/rise time: 10.0 ns
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO
External dimensions/packaging: SO
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4840DY
|
Vishay Semiconductor | 功能相似 |
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SI4840DY
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VISHAY | 功能相似 |
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SI4840DY
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Visay | 功能相似 | SOIC-8 |
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SI4840DY-E3
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Vishay Semiconductor | 功能相似 | SO |
Small Signal Field-Effect Transistor, 10A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8
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SI4840DY-E3
|
Vishay Siliconix | 功能相似 | SO-8 |
Small Signal Field-Effect Transistor, 10A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8
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SI4840DY-T1-GE3
|
Vishay Siliconix | 功能相似 | SO-8 |
MOSFET N-CH 40V 10A 8-SOIC
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SI4840DY-T1-GE3
|
VISHAY | 功能相似 |
MOSFET N-CH 40V 10A 8-SOIC
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