Technical parameters/drain source resistance: | 9.00 mΩ |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 1.56 W |
|
Technical parameters/breakdown voltage of gate source: | ±20.0 V |
|
Technical parameters/Continuous drain current (Ids): | 14.0 A |
|
Package parameters/number of pins: | 8 |
|
Encapsulation parameters/Encapsulation: | SO |
|
Dimensions/Packaging: | SO |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4840DY-T1
|
Vishay Siliconix | 功能相似 | SOT |
Small Signal Field-Effect Transistor, 10A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
|
||
SI4840DY-T1
|
VISHAY | 功能相似 | SO |
Small Signal Field-Effect Transistor, 10A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
|
||
SI4840DY-T1-E3
|
Vishay Semiconductor | 类似代替 | SO-8 |
MOSFET, Power; N-Ch; VDSS 40V; RDS(ON) 0.0075Ω; ID 10A; SO-8; PD 1.56W; VGS +/-20V
|
||
SI4840DY-T1-E3
|
Vishay Siliconix | 类似代替 | SO-8 |
MOSFET, Power; N-Ch; VDSS 40V; RDS(ON) 0.0075Ω; ID 10A; SO-8; PD 1.56W; VGS +/-20V
|
||
SI4840DY-T1-GE3
|
Vishay Siliconix | 类似代替 | SO-8 |
MOSFET N-CH 40V 10A 8-SOIC
|
||
SI4840DY-T1-GE3
|
VISHAY | 类似代替 |
MOSFET N-CH 40V 10A 8-SOIC
|
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