Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Other/궟동: Dual
Other/Case/Package: SOIC-8 Narrow
Other/Packaging: Reel
Other/Brand: Vishay / Siliconix
Other/순방향プ랜동컨덕동 - 소: 22 S
Other/동착 동: SMD/SMT
Other/Soft 랜イ동터극동: P-Channel
Other/Channel Mode: Enhancement
Other/하강 Economy: 90 ns
Other/Id - Link Files: 5.8 A
Other/Delete 동업체: Vishay
Other/동대작동온도: 150 C
Other/π소작동온도: 55 C
Other/Pd - 력발산: 1.1 W
Other/Delete 품카테 High speed: Dual MOSFETs
Other/RDs On - Drain Source 저항: 23 mOhms
Other/상승クク: 15 ns
Other/Standard Pack Qty: 2500
Other/상표명: TrenchFET
Other/표준오프い Contact Us: 115 ns
Other/Vds - 레イ?동항복압: 25 V
Other/Vgs - 게イプ - ?동항복압: 25 V
Other/RoHS: Non-Compliant
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4973DY-T1-GE3
|
Vishay Siliconix | 类似代替 | SOIC-8 |
MOSFET 30V 7.6A 2W 23mohm @ 10V
|
||
|
|
VISHAY | 类似代替 | SOP-8 |
MOSFET 30V 7.6A 2W 23mohm @ 10V
|
||
SI4973DY-T1-GE3
|
Vishay Semiconductor | 类似代替 |
MOSFET 30V 7.6A 2W 23mohm @ 10V
|
|||
|
|
Zetex | 功能相似 | SOIC-8 |
ZXMP3A17 系列 30 V 0.07 Ohm 双 P 沟道 增强模式 MOSFET - SOIC-8
|
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