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Model SI4688DY-T1-E3
Description MOSFET N-CH 30V 8.9A 8-SOIC
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Brand: Vishay Siliconix
Packaging SO-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9408) Minimum order quantity(1)
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Technical parameters/dissipated power: 1.4W (Ta)

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/Input capacitance (Ciss): 1580pF @15V(Vds)

Technical parameters/dissipated power (Max): 1.4W (Ta)

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: SO-8

External dimensions/packaging: SO-8

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4172DY-T1-GE3 SI4172DY-T1-GE3 Vishay Semiconductor 功能相似 SO-8
SI4172DY-T1-GE3 N-channel MOSFET Transistor, 15A, 30V, 8Pin SOIC
PDF
SI4172DY-T1-GE3 SI4172DY-T1-GE3 Vishay Siliconix 功能相似 SOIC-8
SI4172DY-T1-GE3 N-channel MOSFET Transistor, 15A, 30V, 8Pin SOIC
PDF

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