Technical parameters/rise time: 12 ns
Technical parameters/Input capacitance (Ciss): 820pF @15V(Vds)
Technical parameters/descent time: 10 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 4.5 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/length: 5 mm
External dimensions/width: 4 mm
External dimensions/height: 1.55 mm
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4162DY-T1-GE3
|
Vishay Siliconix | 类似代替 | SOIC-8 |
Trans MOSFET N-CH 30V 13.6A 8Pin SOIC N T/R
|
||
SI4688DY-T1-GE3
|
Vishay Semiconductor | 类似代替 |
MOSFET N-CH 30V 8.9A 8-SOIC
|
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