Technical parameters/dissipated power: 2.5W (Ta), 4.5W (Tc)
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Input capacitance (Ciss): 820pF @15V(Vds)
Technical parameters/dissipated power (Max): 2.5W (Ta), 4.5W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Last Time Buy
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4162DY-T1-GE3
|
Vishay Siliconix | 类似代替 | SOIC-8 |
Trans MOSFET N-CH 30V 13.6A 8Pin SOIC N T/R
|
||
SI4688DY-T1-GE3
|
Vishay Semiconductor | 类似代替 |
MOSFET N-CH 30V 8.9A 8-SOIC
|
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