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Model SI4973DY-T1-E3
Description Trans MOSFET P-CH 30V 5.8A 8Pin SOIC N T/R
Product QR code
Brand: Vishay Semiconductor
Packaging SO-8
Delivery time
Packaging method
Standard packaging quantity 1
8.79  yuan 8.79yuan
10+:
$ 10.5492
100+:
$ 10.0217
500+:
$ 9.6701
1000+:
$ 9.6525
2000+:
$ 9.5822
5000+:
$ 9.4943
7500+:
$ 9.4240
10000+:
$ 9.3888
Quantity
10+
100+
500+
1000+
2000+
Price
$10.5492
$10.0217
$9.6701
$9.6525
$9.5822
Price $ 10.5492 $ 10.0217 $ 9.6701 $ 9.6525 $ 9.5822
Start batch production 10+ 100+ 500+ 1000+ 2000+
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  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9760) Minimum order quantity(10)
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Technical parameters/drain source resistance: 0.029 Ω

Technical parameters/polarity: Dual P-Channel

Technical parameters/dissipated power: 1.1 W

Technical parameters/drain source voltage (Vds): -30.0 V

Technical parameters/breakdown voltage of gate source: ±25.0 V

Technical parameters/Continuous drain current (Ids): 7.60 A

Technical parameters/thermal resistance: 85℃/W (RθJA)

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SO-8

External dimensions/length: 5 mm

External dimensions/height: 1.55 mm

External dimensions/packaging: SO-8

Physical parameters/operating temperature: -55℃ ~ 150℃

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4973DY-T1-GE3 SI4973DY-T1-GE3 Vishay Siliconix 类似代替 SOIC-8
MOSFET 30V 7.6A 2W 23mohm @ 10V
PDF
SI4973DY-T1-GE3 SI4973DY-T1-GE3 VISHAY 类似代替 SOP-8
MOSFET 30V 7.6A 2W 23mohm @ 10V
PDF
SI4973DY-T1-GE3 SI4973DY-T1-GE3 Vishay Semiconductor 类似代替
MOSFET 30V 7.6A 2W 23mohm @ 10V
PDF
ZXMP3A17DN8TA ZXMP3A17DN8TA Zetex 功能相似 SOIC-8
ZXMP3A17 系列 30 V 0.07 Ohm 双 P 沟道 增强模式 MOSFET - SOIC-8

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