Technical parameters/drain source resistance: 20.0 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.90 W
Technical parameters/drain source voltage (Vds): 800 V
Technical parameters/leakage source breakdown voltage: 800 V
Technical parameters/breakdown voltage of gate source: ±30.0 V
Technical parameters/Continuous drain current (Ids): 200 mA
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-223
External dimensions/packaging: SOT-223
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDT457N
|
ON Semiconductor | 功能相似 | TO-261-4 |
FAIRCHILD SEMICONDUCTOR FDT457N 晶体管, MOSFET, N沟道, 5 A, 30 V, 0.043 ohm, 10 V, 1.6 V
|
||
STN4NF03L
|
ST Microelectronics | 功能相似 | TO-261-4 |
STMICROELECTRONICS STN4NF03L 晶体管, MOSFET, N沟道, 6.5 A, 30 V, 0.039 ohm, 10 V, 1 V
|
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