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Model STN4NF03L
Description STMICROELECTRONICS STN4NF03L 晶体管, MOSFET, N沟道, 6.5 A, 30 V, 0.039 ohm, 10 V, 1 V
Product QR code
Brand: ST Microelectronics
Packaging TO-261-4
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.74  yuan 1.74yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7929) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

30.0 V

 

Technical parameters/rated current:

6.50 A

 

Technical parameters/rated power:

3.3 W

 

Technical parameters/number of pins:

4

 

Technical parameters/drain source resistance:

0.039 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

3.3 W

 

Technical parameters/threshold voltage:

1 V

 

Technical parameters/Input capacitance:

330 pF

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/Leakage source breakdown voltage:

30.0 V

 

Technical parameters/breakdown voltage of gate source:

±16.0 V

 

Technical parameters/Continuous drain current (Ids):

6.50 A

 

Technical parameters/rise time:

100 ns

 

Technical parameters/Input capacitance (Ciss):

330pF @25V(Vds)

 

Technical parameters/rated power (Max):

3.3 W

 

Technical parameters/descent time:

22 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

3300 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

4

 

Encapsulation parameters/Encapsulation:

TO-261-4

 

Dimensions/Length:

6.5 mm

 

Dimensions/Width:

3.5 mm

 

Dimensions/Height:

1.8 mm

 

Dimensions/Packaging:

TO-261-4

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packa

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FDT457N FDT457N ON Semiconductor 功能相似 TO-261-4
FAIRCHILD SEMICONDUCTOR FDT457N 晶体管, MOSFET, N沟道, 5 A, 30 V, 0.043 ohm, 10 V, 1.6 V
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STN2NE10 STN2NE10 ST Microelectronics 类似代替 TO-261-4
N - CHANNEL 100V - 0.33欧姆 - 2A - SOT- 223的STripFET功率MOSFET N - CHANNEL 100V - 0.33 ohm - 2A - SOT-223 STripFET POWER MOSFET
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STN4NF06L STN4NF06L ST Microelectronics 类似代替 TO-261-4
60V,4A,N沟道MOSFET
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