Technical parameters/number of pins: 4
Technical parameters/drain source resistance: 0.043 Ω
Technical parameters/dissipated power: 3 W
Technical parameters/threshold voltage: 1.6 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/rise time: 12 ns
Technical parameters/Input capacitance (Ciss): 235pF @15V(Vds)
Technical parameters/rated power (Max): 1.1 W
Technical parameters/descent time: 3 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 3 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/length: 6.5 mm
External dimensions/width: 3.56 mm
External dimensions/height: 1.6 mm
External dimensions/packaging: TO-261-4
Physical parameters/operating temperature: -65℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Portable equipment, motor drive and control, consumer electronics, computers and computer peripherals, power management, industrial
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDT457N
|
ON Semiconductor | 功能相似 | TO-261-4 |
FAIRCHILD SEMICONDUCTOR FDT457N 晶体管, MOSFET, N沟道, 5 A, 30 V, 0.043 ohm, 10 V, 1.6 V
|
||
FDT459N
|
Fairchild | 类似代替 | TO-261-4 |
ON Semiconductor PowerTrench 系列 Si N沟道 MOSFET FDT459N, 6.5 A, Vds=30 V, 3针+焊片 SOT-223封装
|
||
FDT459N
|
ON Semiconductor | 类似代替 | TO-261-4 |
ON Semiconductor PowerTrench 系列 Si N沟道 MOSFET FDT459N, 6.5 A, Vds=30 V, 3针+焊片 SOT-223封装
|
||
STN4NF03L
|
ST Microelectronics | 功能相似 | TO-261-4 |
STMICROELECTRONICS STN4NF03L 晶体管, MOSFET, N沟道, 6.5 A, 30 V, 0.039 ohm, 10 V, 1 V
|
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