Technical parameters/number of pins: | 3 |
|
Technical parameters/drain source resistance: | 0.07 Ω |
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Technical parameters/dissipated power: | 3.3 W |
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Technical parameters/threshold voltage: | 2.8 V |
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Technical parameters/Input capacitance: | 340 pF |
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Technical parameters/drain source voltage (Vds): | 60 V |
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Technical parameters/rise time: | 25 ns |
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Technical parameters/Input capacitance (Ciss): | 340pF @25V(Vds) |
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Technical parameters/rated power (Max): | 3.3 W |
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Technical parameters/descent time: | 10 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 3.3W (Tc) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | TO-261-4 |
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Dimensions/Packaging: | TO-261-4 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STN2NE10
|
ST Microelectronics | 类似代替 | TO-261-4 |
N - CHANNEL 100V - 0.33欧姆 - 2A - SOT- 223的STripFET功率MOSFET N - CHANNEL 100V - 0.33 ohm - 2A - SOT-223 STripFET POWER MOSFET
|
||
STN4NF03L
|
ST Microelectronics | 类似代替 | TO-261-4 |
STMICROELECTRONICS STN4NF03L 晶体管, MOSFET, N沟道, 6.5 A, 30 V, 0.039 ohm, 10 V, 1 V
|
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