Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 3.7 W
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 50A
Technical parameters/rise time: 9 ns
Technical parameters/Input capacitance (Ciss): 1325pF @25V(Vds)
Technical parameters/rated power (Max): 3.7 W
Technical parameters/descent time: 7 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3700 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263
External dimensions/packaging: TO-263
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BUK7613-60E
|
NXP | 功能相似 | TO-263 |
NXP BUK7613-60E 晶体管, MOSFET, N沟道, 58 A, 60 V, 0.00944 ohm, 10 V, 3 V
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|
|
Vishay Intertechnology | 类似代替 | D2PAK |
MOSFET N-CH 60V 50A D2PAK
|
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|
|
IRF | 类似代替 |
MOSFET N-CH 60V 50A D2PAK
|
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IRFZ48S
|
Vishay Semiconductor | 类似代替 |
MOSFET N-CH 60V 50A D2PAK
|
|||
IRFZ48S
|
VISHAY | 类似代替 | TO-263 |
MOSFET N-CH 60V 50A D2PAK
|
||
IRFZ48S
|
International Rectifier | 类似代替 | D2PAK |
MOSFET N-CH 60V 50A D2PAK
|
||
IRFZ48S
|
Vishay Siliconix | 类似代替 | TO-263-3 |
MOSFET N-CH 60V 50A D2PAK
|
||
IRFZ48SPBF
|
Vishay Siliconix | 类似代替 | TO-263-3 |
MOSFET N-CH 60V 50A D2PAK
|
||
IRFZ48STRL
|
VISHAY | 类似代替 | D2PAK-263 |
MOSFET N-CH 60V 50A D2PAK
|
||
IRFZ48STRL
|
Vishay Semiconductor | 类似代替 |
MOSFET N-CH 60V 50A D2PAK
|
|||
STB55NF06T4
|
ST Microelectronics | 功能相似 | TO-263-3 |
N 通道 STripFET™ II,STMicroelectronics STripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。 ### MOSFET 晶体管,STMicroelectronics
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