Technical parameters/dissipated power: 3.7W (Ta), 190W (Tc)
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Input capacitance (Ciss): 2400pF @25V(Vds)
Technical parameters/dissipated power (Max): 3.7W (Ta), 190W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Vishay Intertechnology | 完全替代 | D2PAK |
MOSFET N-CH 60V 50A D2PAK
|
||
|
|
IRF | 完全替代 |
MOSFET N-CH 60V 50A D2PAK
|
|||
IRFZ48S
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH 60V 50A D2PAK
|
|||
IRFZ48S
|
VISHAY | 完全替代 | TO-263 |
MOSFET N-CH 60V 50A D2PAK
|
||
IRFZ48S
|
International Rectifier | 完全替代 | D2PAK |
MOSFET N-CH 60V 50A D2PAK
|
||
IRFZ48S
|
Vishay Siliconix | 完全替代 | TO-263-3 |
MOSFET N-CH 60V 50A D2PAK
|
||
SUM50N06-16L-E3
|
VISHAY | 类似代替 | TO-263 |
Mosfet, n Ch, 60V, 0.13Ω, 50A, To-263
|
||
SUM50N06-16L-E3
|
Vishay Semiconductor | 类似代替 | TO-263 |
Mosfet, n Ch, 60V, 0.13Ω, 50A, To-263
|
||
|
|
Vishay Intertechnology | 类似代替 | D2PAK-2 |
Mosfet, n Ch, 60V, 0.13Ω, 50A, To-263
|
||
SUM50N06-16L-E3
|
Vishay Siliconix | 类似代替 | TO-263-3 |
Mosfet, n Ch, 60V, 0.13Ω, 50A, To-263
|
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