Technical parameters/dissipated power: 190 W
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/rise time: 250 ns
Technical parameters/Input capacitance (Ciss): 2400pF @25V(Vds)
Technical parameters/descent time: 250 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3.7W (Ta), 190W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.67 mm
External dimensions/width: 9.65 mm
External dimensions/height: 4.83 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SUD23N06-31-GE3
|
Vishay Semiconductor | 功能相似 | TO-252-3 |
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 0.025Ω; ID 25A; TO-252; PD 50W; VGS +/-20V; -55
|
||
SUD23N06-31L-E3
|
Vishay Semiconductor | 功能相似 | TO-252 |
Trans MOSFET N-CH 60V 23A 3Pin(2+Tab) DPAK
|
||
SUD23N06-31L-E3
|
VISHAY | 功能相似 | TO-252-3 |
Trans MOSFET N-CH 60V 23A 3Pin(2+Tab) DPAK
|
||
SUM50N06-16L-E3
|
VISHAY | 类似代替 | TO-263 |
Mosfet, n Ch, 60V, 0.13Ω, 50A, To-263
|
||
SUM50N06-16L-E3
|
Vishay Semiconductor | 类似代替 | TO-263 |
Mosfet, n Ch, 60V, 0.13Ω, 50A, To-263
|
||
|
|
Vishay Intertechnology | 类似代替 | D2PAK-2 |
Mosfet, n Ch, 60V, 0.13Ω, 50A, To-263
|
||
SUM50N06-16L-E3
|
Vishay Siliconix | 类似代替 | TO-263-3 |
Mosfet, n Ch, 60V, 0.13Ω, 50A, To-263
|
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