Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.003 Ω
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 3.1 W
Technical parameters/threshold voltage: 1 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 85A
Technical parameters/rise time: 10 ns
Technical parameters/descent time: 10 ns
Technical parameters/operating temperature (Max): 175 ℃
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.41 mm
External dimensions/width: 4.7 mm
External dimensions/height: 15.49 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Minimum Packaging: 50
Other/Manufacturing Applications: Industrial, power management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SUP75N03-04-E3
|
Vishay Siliconix | 类似代替 | TO-220-3 |
Trans MOSFET N-CH 30V 75A 3Pin(3+Tab) TO-220AB
|
||
SUP75N03-04-E3
|
VISHAY | 类似代替 | TO-220-3 |
Trans MOSFET N-CH 30V 75A 3Pin(3+Tab) TO-220AB
|
||
SUP75N03-04-E3
|
Vishay Semiconductor | 类似代替 | TO-220 |
Trans MOSFET N-CH 30V 75A 3Pin(3+Tab) TO-220AB
|
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