Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 75A
Technical parameters/rise time: 40 ns
Technical parameters/Input capacitance (Ciss): 10742pF @25V(Vds)
Technical parameters/rated power (Max): 3.7 W
Technical parameters/descent time: 95 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 187000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SUP85N03-3M6P-GE3
|
VISHAY | 类似代替 | TO-220-3 |
Trans MOSFET N-CH 30V 85A 3Pin(3+Tab) TO-220AB
|
||
SUP85N03-3M6P-GE3
|
Vishay Semiconductor | 类似代替 | TO-220-3 |
Trans MOSFET N-CH 30V 85A 3Pin(3+Tab) TO-220AB
|
||
SUP85N03-3M6P-GE3
|
Vishay Siliconix | 类似代替 | TO-220-3 |
Trans MOSFET N-CH 30V 85A 3Pin(3+Tab) TO-220AB
|
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