Technical parameters/drain source resistance: 0.006 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 187 W
Technical parameters/input capacitance: 10742pF @25V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 75.0 A
Technical parameters/rise time: 40 ns
Technical parameters/thermal resistance: 0.6℃/W (RθJC)
Technical parameters/Input capacitance (Ciss): 10742pF @25V(Vds)
Technical parameters/descent time: 95 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 187 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/length: 10.41 mm
External dimensions/width: 4.7 mm
External dimensions/height: 9.01 mm
External dimensions/packaging: TO-220
Physical parameters/operating temperature: -55℃ ~ 175℃
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SUP85N03-3M6P-GE3
|
VISHAY | 类似代替 | TO-220-3 |
Trans MOSFET N-CH 30V 85A 3Pin(3+Tab) TO-220AB
|
||
SUP85N03-3M6P-GE3
|
Vishay Semiconductor | 类似代替 | TO-220-3 |
Trans MOSFET N-CH 30V 85A 3Pin(3+Tab) TO-220AB
|
||
SUP85N03-3M6P-GE3
|
Vishay Siliconix | 类似代替 | TO-220-3 |
Trans MOSFET N-CH 30V 85A 3Pin(3+Tab) TO-220AB
|
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